“High-Performance Solution-Processed n-Channel Organic Thin-Film Transistors Based on a Long Chain Alkyl-Substituted C60 Derivative”
Y. Horii, K. Sakaguchi, M. Chikamatsu, R. Azumi, K. Yase, M. Kitagawa, H. Konishi, Appl. Phys. Express 2010, 3, 101601. DOI: 10.1143/APEX.3.101601
We report on high-performance solution-processed n-channel organic thin-film transistors based on a long-chain alkyl-substituted fullerene derivative, C60-fused N-methylpyrrolidine-meta-dodecyl phenyl (C60MC12), by surface modification of an insulator. C60MC12 films were fabricated on self-assembled monolayer (SAM)-treated gate insulators by spin-coating, which was facilitated by hydrophilic patterning of the edge of the substrate. X-ray diffraction revealed that the crystallinity of C60MC12 films was improved by SAM treatment. The octadecyltrichlorosilane-treated device demonstrated a high mobility of 0.4?0.5 cm2 V-1 s-1, which is comparable with those of amorphous silicon thin-film transistors. An improvement in bias stress stability by the SAM treatment was also observed.